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 NTE163A Silicon NPN Transistor Horizontal Deflection
Description: The NTE163A is an NPN silicon transistor in a TO3 type case designed for use in large screen color deflection circuits. Features: D Collector-Emitter Voltage: VCEX = 1500V D Collector-Emitter Sustaining Voltage: VCEO(sus) = 700V D Switching Times With Inductive Loads: tf = 0.4s (Typ) @ IC = 4.5A Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V Collector-Emitter Voltage, VCEX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V Emitter-Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.5A Peak Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Total Device Dissipation (TC = +95C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.5W Derate Above 95C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.625W/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +115C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +115C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.6C/W Maximum Lead Temperature (For Soldering, 1/8" from case for 5sec), TL . . . . . . . . . . . . . . . +275C Note 1. Pulse Test: Pulse Width = 5ms, Duty Cycle 10%
Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter OFF Characteristics (Note 2) Collector-Emitter Sustaining Voltage Collector Cutoff Current Emitter-Base Voltage ON Characteristics (Note 2) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Dynamic Characteristics Current Gain-Bandwidth Product Output Capacitance Switching Characteristics Fall Time tf IC = 4.5A, IB = 1.8A, LB = 10H - 0.6 - s fT Cob IC = 100mA, VCE = 5V, f = 1MHz VCB = 10V, IE = 0, f = 1MHz - - 4 125 - - MHz pF hFE VCE(sat) VBE(sat) IC = 4.5A, VCE = 5V IC = 4.5A, IB = 2A IC = 4.5A, IB = 2A 2.25 - - - - - - 5 1.5 V V VCEO(sus) IC = 100mA, IB = 0 ICES VEBO VCE = 1500V, VBE = 0 IE = 10mA, IC = 0 700 - 5 - - - - 1.0 - V mA V Symbol Test Conditions Min Typ Max Unit
Note 2. Pulse Test: Pulse Width = 300s, Duty Cycle 2% .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane
.312 (7.93) Min Emitter .215 (5.45)
.040 (1.02) 1.187 (30.16) .665 (16.9) .156 (3.96) Dia (2 Holes)
.430 (10.92)
.188 (4.8) R Max
Base
.525 (13.35) R Max Collector/Case


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